Hitachi and RIEC Developed 'Nonvolatile IC' using Spintronics tech based on MTJ device
Hitachi and the Tohoku University's Research Institute of Electrical Communication (RIEC) said they developed a new integrated circuit that integrates an arithmetic function and a nonvolatile memory function by using spintronics and Si technologies.
The IC is made by placing a MTJ (magnetic tunnel junction) MRAM device on a Si chip with a MOS transistor. The data transfer rate is faster, and the IC is small using that method.
The idea is that a circuit that combines memory and a arithmetic unit is faster and smaller
The prototype chip is a full adder composed of the SUM and CARRY
blocks. The SUM block measures 15.5 x 10.7?m, and the CARRY block is
13.9 x 10.7?m. The CMOS logic block was formed with Hitachi's 0.18?m
process technology.
Similar entries
- Hitachi, Tohoku Univ. Jointly Prototype 2 Mbit Nonvolatile RAM Based on Spin Torque Transfer
- AIST Develops GMR Device for Spin Injection MRAM Based on Perpendicular Magnetization, aims for 1Gbit
- Hitachi Improves Laminated Ferri Structure in Spin Injection MRAM
- Hitachi's Memory Element Structure Opens Door To Gigabit MRAM
- Epson, Fujitsu Announce Next-Gen FRAM Technology Project Results
