Recent MRAM News - Page 2

Researchers report the first all-antiferromagnetic tunnel junction device with both electrical switching and electrical readout

Researchers from Northwestern University, led by Prof. Pedram Khalili, report the first all-antiferromagnetic tunnel junction (ATJ) devices with both electrical switching and electrical readout of the antiferromagnetic state. The researchers observed a large room-temperature tunneling magnetoresistance effect that is comparable in size to conventional ferromagnet-based tunnel junctions. 

To create the new devices, the researchers used sputtering to deposit the device films on conventional silicon wafers. The films are compatible with established semiconductor manufacturing processes. 

Read the full story Posted: Mar 23,2024

Tiempro Secure's Secure Element succesfully implemented in GlobalFroundries 22-nm process with MRAM memory

France-based Tiempro Secure announced that its TESIC RISC-V Secure Element was implemented in GlobalFoundries’ 22-nm platform with embedded MRAM, after a rigorous characterization process.

Tiempo Secure says it leveraged its long-standing know-how in Secure IP, to adapt its TESIC  design to the 22FDX technology process node. The TESIC platform has a secure architecture based on a RISC-V CPU core, several memory types (including ROM, RAM, Cache,  Crypto-RAM, and MRAM), random number generators, security  sensors, and secure crypto-accelerators. This provides a pre-silicon  certified IP solution on GF’s 22FDX to SoC manufacturers who require a high-end Secure  Element.

Read the full story Posted: Mar 21,2024

Everspin reports its Q4 2023 earning results

Everspin Technologies reported its financial results for Q4 2023, with revenues of $16.7 million and a net income of $2 million. Product sales were a bit slower than last year, but licensing and royalties were higher at $4.3 million (up from $1.1 million in 2022).

 

Everspin chip render

For the full year 2023, Everspin achieved record revenues of $63.8 million (up 6% from 2022), and net income of $9.1 million. At the end of the year Everspin had a cash balance of $36.9 million.

Read the full story Posted: Mar 01,2024

Renesas developed new STT-MRAM circuit technology, achieves the world's fastest random access speed

Renesas Electronics announced that it has developed circuit technologies for embedded STT-MRAM that reduces the energy and voltage of the memory write operation. 

Renesas produced a 22-nm MCU test chip, that includes a 10.8 Mbit embedded MRAM memory cell array. It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).

Read the full story Posted: Feb 24,2024

PSMC collaborates with Power Spin for MRAM production by 2029

Reports in Japan suggest that Taiwan's Powerchip Semiconductor Manufacturing (PSMC) will enter into a new MRAM R&D project, together with Japan's Power Spin. PSMC plans to start producing MRAM chips by 2029, at its 12-inch factory that it is now building in Japan.

Power Spin, that holds MRAM IP originally developed at Tohoku University, will license its IP to PSMC and will assist in the required R&D and ramp-up of production at PSMC's fab. PSMC looks to utilize the MRAM technology mainly for generative AI data center solutions.

Read the full story Posted: Feb 07,2024

Tohoku University researchers develop a high performance X nm MTJ

Researchers from Japan's Tohoku University developed a method to produce X nm MTJs, using a CoFeB/MgO stack structure. The researchers report that the extremely small device achieves both high-retention and high-speed. This was enabled by controlling the shape and interfacial anisotropies individually by varying the thickness of each CoFeB layer and the quantity of [CoFeB/MgO] stacks.

The researcher further report that shape anisotropy-enhanced MTJs showed good retention (> 10 years) at 150 °C at single nanometer sizes, whereas interfacial anisotropy-enhanced MTJs exhibited rapid speed switching (10 ns or less) below 1 V.

Read the full story Posted: Jan 19,2024

ITRI and TSMC announce advances in SOT-MRAM development

In 2022, Taiwan's Industrial Technology Research Institute (ITRI) announced an agreement with Taiwan Semiconductor Manufacturing Company (TSMC) to collaborate on SOT-MRAM R&D. ITRI and TSMC now announced that they have developed SOT-MRAM array chips that boasts a power consumption of merely one percent of a comparable STT-MRAM device. 

ITRI and TSMC published a new research paper that was presented at the 2023 IEE International Electron Devices Meeting (IEDM 2023). ITRI explains that the new unit cell achieves simultaneous low power consumption and high-speed operation, reaching speeds as rapid as 10 nanoseconds. And its overall computing performance can be further enhanced when integrated with computing in memory circuit design. 

Read the full story Posted: Jan 18,2024

Netsol Unveils First Standalone MRAM Using 28nm Process, Shares the Outlook for Standalone MRAM at 2023 MRAM Forum

At the 2023 MRAM Forum, a key event by the IEEE Magnetics Society tied to the IEDM conference, Mr. Noh, Chief Technology Officer at Netsol, provided an overview of the company's advancements in MRAM technology.

Mr. Noh introduced Netsol's development of its first standalone MRAM, created using 28nm eMRAM technology from Samsung Foundry. He presented the technical characteristics of the product, focusing on its data retention, endurance,  resistance to magnetic interference and quality, which have been validated through extensive testing.

Read the full story Posted: Jan 10,2024

Everspin reports its financial results for Q3 2023, launches a new MRAM for distributed Edge AI project

Everspin Technologies reported its financial results for Q3 2023, with revenues of $16.5 million (up 8% from Q3 2022) and a net income of $2.4 million. The company generated $3.6 million and its current cash balance is $34.9 million.Everspin Technologies chip photo

Everspin is cautiously optimistic about the next quarter, expecting revenue to be in the range of $15.4 to $16.4 million. It says demand for its toggle products remain strong and it sees increased demand for its xSPI family of STT-MRAM products.

Read the full story Posted: Nov 02,2023