Taiwan's Semiconductor Research Institute developed an SOT-MRAM device based on a PMA technique

Researchers at Taiwan's Semiconductor Research Institute (TSRI) unveiled a new SOT-MRAM memory device that they developed in collaboration with University scientists.

TSRI SOT MRAM device photo

The new device uses a perpendicular magnetic anisotropy (PMA) technique. According to the TSRI researchers, they are the second team to successfully produce MRAM chips based on PMA (Intel is the first team to have achieved this).

The device is made from more than 30 layers of film, each about 0.4 nm high. To produce the films, the researchers use PVD systems made by Applied Materials.

TSRI's goal is to transfer the technology to Taiwan-based chip makers,although this is still an early stage development. This research was performed in collaboration with the National Taiwan University, National Tsing Hua University and the Industrial Technology Research Institute (ITRI).

Posted: Nov 10,2021 by Ron Mertens