Researchers identify the semimetal MoTe2 as a promising MRAM material

Researchers from the National University of Singapore (NUS) have identified a promising spintronics candidate material - few-layer thin semimetal molybdenum ditelluride (MoTe₂). When thinned to a few layer thickness, the MoTe₂ features excellent Spin Hall Effect properties.

The team now aims to incorporate MoTe₂ into functional devices - such as MRAM devices.