Researchers identify the semimetal MoTe2 as a promising MRAM material

Researchers from the National University of Singapore (NUS) have identified a promising spintronics candidate material - few-layer thin semimetal molybdenum ditelluride (MoTe2). When thinned to a few layer thickness, the MoTe2 features excellent Spin Hall Effect properties.

Planar Spin Hall Effect observed in MoTe2 (NUS)

The team now aims to incorporate MoTe2 into functional devices - such as MRAM devices.

Posted: Feb 06,2020 by Ron Mertens