In October 2011, Micron and Singapore's A*STAR Data Storage Institute (DSI) announced a 3-year STT-MRAM co-development project. Today they announced that they extend this collaboration for three more years.
DSI and Micro are co-developing high-density STT-MRAM devices. Micron established a technology centre in Singapore, with help from the DSI, which also provided the necessary expertise and innovation to achieve successful fabrication of STT-MRAM devices. In the next three years, the research collaboration will focus on developing low-power consumption switching mechanisms, and improving the performance of STT-MRAM devices.