Videos

Researchers show how antiferromagnetic STT-MRAM technology can enable higher-density and lower energy memory

Researchers from Northwestern University suggest building STT-MRAM devices from antiferromagnetic materials - as opposed to the currently-used ferromagnetic ones. The researchers say that these materials will enable higher-density devices that feature high speed writing with low currents.

Antiferromagnetic materials are magnetically ordered at the microscopic scale, but not at the macroscopic scale. This means that there is no magnetic force between adjacent bits in MRAM cells built from these materials - which means you can pack them very close together.

Read the full story Posted: Feb 21,2020

Everspin shows how its new nvNITRO accelerators provide superior latency determinism

In March 2017 Everspin announced its nvNITRO line of storage accelerators, with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips. Everspin is accepting orders for these accelerators which should start shipping by the end of the year.

In the video above you can see a recent demonstration by Everspin of how these nvNITRO accelerators provide superior latency determinism enabling a Low Latency Write Buffer for applications such as Apache Log4J.

Read the full story Posted: Dec 11,2017

Everspin: 256Mb ST-MRAM chips coming soon

Here's an interesting video interview with Joe O'Hare, Everspin's Director of Product Marketing. Joe explains the company's MRAM (and ST-MRAM) tech and business, especially how it relates to enterprise SSD, which seems to be the focus of MRAM applications at the moment:

During the interview, Joe updates that everspin is now designing a 256Mb chip, and this will be the next product the company will introduce. Currently their highest-density chip is the 64Mb ST-MRAM chip (announced in 2012, but only ramped-up recently).

Read the full story Posted: Aug 24,2014

Micron starts mass production of 45nm 1Gb PCM chips

Micron announced that it is now mas-producing 45-nanometer Phase Change Memory (PCM) for mobile devices, featuring 1-gigabit (Gb) PCM plus 512-megabit (Mb) LPDDR2 in a multichip package. This is the first time that PCM memory is available in volume production.

The 45nm PCM is targeted for feature phones, with a future roadmap aimed at addressing smartphones and media tablets.

Read the full story Posted: Jul 20,2012