Renesas claims to have already devised a 130-nm MRAM, which is a four-level-metal technology with a cell size of 0.81-micron2 and a standby current of zero.
But on its roadmap, the company will first commercialize an MRAM
product, based on 90-nm technology that operates from 100-to-150-MHz.
Slated for 2010, the device is geared for embedded memory applications
in the company's core microcontroller market, said Katsuhiro Tsukamoto,
president and chief operating officer at Renesas.
A 65-nm, 200-MHz MRAM is due out in 2012.
Read more here (EETimes)
