Samsung's semiconductor chief Kim Ki-nam says that Samsung is developing next-generation memory technologies, such as MRAM and RRAM. According to Kim "Samsung will commercialize MRAMs and ReRAMs according to our own schedule. We are on our way and will be ready soon"
Samsung targets MRAM as an update to DRAM memory, while RRAM will be used as a storage memory to replace NAND.
Everspin announced that it started shipping 256Mb ST-MRAM samples to customers. Everspin also plans to increase the density and sample 1Gb ST-MRAM chips later this year. The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Volume production is expected "soon".
The new EMD3D256 chips are based on Everspin's proprietary magnetic tunnel junction (pMTJ) spin torque technology - and the company expects the new technology to enable it to produce ST-MRAM in lower geometries - and higher densities beyond 1Gb in the future.
Everspin announced that IBM has demonstrated the company's Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. IBM showed show how Everspinâs ST-MRAM operates as persistent memory, accelerating storage and server applications.
ConTutto is an IBM research configurable platform for innovation in the memory subsystem of an OpenPOWER node. The DDR3 interface on the Everspin Spin Torque MRAM makes it easy for developers to take advantage of the write speed and persistence of MRAM.