China-based MRAM developer Truth Memory Corporation announced that it has successfully demonstrated the world's first 8 Mb SOT-MRAM chip, using a 110 nm technology node.
TMC developed a fully-integrated wafer-level SOT-MRAM manufacturing flow based on an autonomous 8-inch platform compatible with mainstream CMOS back-end processes. TMC says that through optimized magnetic stack engineering and low-damage etching with precise sidewall passivation, it has developed high-performance SOT-MTJ arrays with 150 nm.
Electrical characterization demonstrates sub-nanosecond write capability, write energy much below 1 pJ/bit, and write-error rates down to 10−6, confirming the scalability, uniformity, and reliability of the wafer-level process.
The new chip that Truth Memory developed adopts a multi-bank architecture with redundancy and on-chip ECC, achieving high yield, fast access, and robust data retention.
