Truth Memory Corporation

Researchers from Beihang University, Aix-Marseille University and Université Paris-Saclay, in collaboration with Truth Memory Corporation, demonstrated a highly efficient orbital torque-driven magnetic tunnel junction (MTJ).

The researchers say that in standard SOT-MRAM devices, the β-phase tungsten (β-W) write electrodes suffer from high electrical resistance and strict thickness limitations. To overcome both issues, the researchers harnessed the hidden degree of freedom, the orbital angular momentum. 

China-based MRAM developer Truth Memory Corporation announced that it has successfully demonstrated the world's first 8 Mb SOT-MRAM chip, using a 110 nm technology node.

TMC developed a fully-integrated wafer-level SOT-MRAM manufacturing flow based on an autonomous 8-inch platform compatible with mainstream CMOS back-end processes. TMC says that through optimized magnetic stack engineering and low-damage etching with precise sidewall passivation, it has developed high-performance SOT-MTJ arrays with 150 nm.

Researchers from Beihang University and Truth Memory Corporation have fabricated a 1 Kbit SOT-MRAM chip using a 180 nm complementary metal oxide semiconductor (CMOS) process, and implemented a physical unclonable function (PUF) on it. This research represents a significant step forward in the field of PUFs.

The newly developed SOT-MRAM sr-PUF achieves a strong, highly reliable, and reconfigurable PUF that can resist machine-learning attacks. The performance of the SOT-MRAM sr-PUF is remarkable - it has a challenge-response pair (CRP) capacity of 109. Its uniformity is 50.07%, diffuseness is 50%, uniqueness is 49.89%, and the bit error rate is 0%, even in a 375 K environment. These values are near-ideal, indicating excellent randomness and reliability.