Toshiba is a diversified manufacturer and marketer of advanced electronic and electrical products. Toshiba has an active MRAM research program, focusing on Perpendicular STT-RAM.
Toshiba reported several advances, and in 2015 presented a highly-efficient test chip.
The latest Toshiba MRAM news:
In making these major advances, Toshiba applied and proved the spin transfer switching and perpendicular magnetic anisotropy (PMA) technologies in a magnetic tunnel junction, which is a key component in the memory cell.
Toshiba Corporation and NEC Corporation today announced that they have developed a magnetoresistive random access memory (MRAM) that combines the highest density with the fastest read and write speed yet achieved. The new MRAM achieves a 16-megabit density and a read and write speed of 200-megabytes a second, and also secures low voltage operation of 1.8V.
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.
Toshiba and NEC jointly presented a paper on a low-power 6F2 MRAM based on a cross-point cell. The 1-megabit MRAM chip is said to have been manufactured in a 130-nm process and a 0.24 x 0.48-micron2 magnetic tunnel junction technology. The chip is said to have a 250-ns access time and 1.5-volt operations. "To suppress the sneak current, a cell design is proposed for the new (cross-point) cell with a hierarchical bit line architecture".