Professor Hideo Ohno at the Tohoku University Research Institute of Electrical Communication and a research group of Hitachi's Advanced Research Laboratory have jointly developed a tunnel magneto-resistance (TMR) element with a reluctivity of 287%, the highest room temperature value ever measured.

The high reluctivity TMR element is necessary to speed up and reduce power consumption of MRAM, a nonvolatile memory that is regarded as a future super-gigabit memory candidate.
The new device also achieved 403% at low temperature.

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