US scientists have come up with a new mechanism that would control magnetic memory of the computers to enable more accurately write and store information in the hard drives. The new technology will switch a magnetic nanoparticle without any magnetic field.

The latest research now aims at empowering computers with magneto-resistive random access memory (MRAM). In MRAM, data is stored in magnetic storage elements that consist of two layers; each one is separated by a thin non-magnetic spacer.

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