Renesas today announced the development of a high-speed, high-reliability MRAM (Magnetoresistive Random Access Memory) technology for SoC (system-on-a-chip) use. Using this technology, Renesas Technology fabricated a prototype 1-Mbit MRAM employing a 130 nm (nanometer) CMOS process.
Investigation showed the prospect of high-speed operation with an operating frequency of 143 MHz or above at a 1.2 V operating voltage, and measurements in a one-trillion-rewrites experiment confirmed that there was no degradation.

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