U.S. memory chip maker Micron Technology has stopped R&D work on magnetic RAM and is doubtful about phase-change memory, two approaches to non-volatile memory being pursued elsewhere. The reason Micron is moving away from the technologies is because the company does not see how they would scale effectively with Moore's Law and justify commercialization. To judge from Durcan's presentation nano-crystalline flash or engineered tunnel barrier (ETB) memory, due to become available in 2006, should appeal to Micron.

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