MRAM research or technical information

Optically-assisted MRAM could outperform current MRAM devices by a factor of 1000

Researchers from the Moscow Institute of Physics and Technology developed a new MRAM architecture that is based on THz pulses which are used to change the spin state. This so-called optically-assisted MRAM is extremely efficient (the power required to switch a "bit" will be a thousand times smaller compared to current MRAM devices) and fast.

The researchers use picosecond-long pulses (3 picoseconds = one light oscillation cycle) on a specially developed structure comprised from micrometer-sized gold antennas deposited on a thulium orthoferrite sample. The researcher admit that the material is excellent for fundamental research, but it may be too early to tell whether it could be used in the future for commercial applications. The researchers tell us that they re trying to raise funds now to start fundamental studies of this new optically-assisted MRAM.

Hprobe teams up with IMEC to develop SOT-MRAM testing tools

Hprobe, a developer of testing equipment for magnetic devices, announced that it has teamed up with the IMEC research institute to jointly extend Hprobe's fast testing protocols for SOT-MRAM devices.

Hprobe wafer prober system photo

Hprobe has already begun to optimize its test flow for SOT-MRAM devices in order to bring the characterization and testing to an industrial level with the primary objective to reduce the testing time while maximizing yield.

NTHU researchers manage to manipulate exchange bias by spin-orbit torque

Researchers from Taiwan's National Tsing Hua University (NTHU)managed to use a spin current to manipulate the exchange bias in Spin-Orbit Torque memory (SOT-MRAM). The researchers say that this has been a long-time challenge in the field.

MRAM chip Manipulating exchange bias by spin-orbit torque (NTHU)

To achieve this, the researchers added a platinum layer under the ferromagnetic and antiferromagnetic layers of the MRAM device. The researchers patented this technique before publishing their findings.

Tohoku University researchers develop the world's fastest STT-MRAM

Researchers from Japan's Tohoku University developed a 128 Mb STT-MRAM device that features a write speed of 14 nm, the world's fastest STT-MRAM chip at a density over 100 Mb.

Tohoku 128 MB STT-MRAM 14 ns write speed image

To achieve this high speed, the researchers developed MTJs that are integrated with CMOS, which also significantly reduces the power-consumption of the memory device.

Silvaco and TU Wien launches a new MRAM device simulation laboratory

EDA and semiconductor IP provider Silvaco announced today that Austria's second Christian Doppler Laboratory (CDL) was opened in collaboration with TU Wien's Institute for Microelectronics. The new CDL will develop new MRAM device simulation solutions.

TU Wien's Dr. Viktor Sverdlov, who heads the new CDL, says that "MRAM has the potential to deliver both more memory density and much lower power consumption extending memory beyond the current solutions".

Intel is developing embedded MRAM technologies

Intel says it will present a new paper detailing its MRAM research at the International Electron Devices Meeting (IEDM) in early December 2018. This is the first time we hear of any MRAM R&D at Intel which is great news, even if it just a research paper.

Intel MTJ array 22nm (Oct 2018)

Intel has apparently successfully integrated embedded MRAM into the company's 22nm FinFET CMOS technology on full 300mm wafers. The magnetic tunnel junction-based memory cells are built from dual MgO magnetic tunnel junctions (MTJs) separated by a CoFeB-based layer in a 1 transistor-1 resistor (1T-1R) configuration in the interconnect stack. Intel has manufactured a 7.2Mbit array with reported data retention figures in excess of 10 years and write endurance of greater than 10^6 cycles.

Researchers develop a sub 10-nm STT MTJ

Researchers from UC Berkeley and the Huazhong University of Science and Technology developed sub 10-nm STT MTJs that shows a thermal stability factor of more than 80.

The reserachers say that the highly efficient and dense MTJ could lead to higher efficiency and density STT-MRAM devices and spin-based computers.

New material could finally enable fast, efficient and dense SOT-MRAM devices

SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed.

Now researchers at the Tokyo Institute of Technology have developed a new thin film material made from bismuth-antimony (BiSb) that is a topological insulator that simultaneously achieves a colossal spin Hall effect and high electrical conductivity - which means it could be used to create SOT-devices.

Multi-layered Co/Ni films are highly desirable materials for effective spin transfer torque

Researchers from the University of Lorraine in France have discovered that multilayers films made of cobalt (Co) and nickel (Ni) hold great promise for STT-MRAM applications.

Multi layered cobalt and nickel films for spintronics

It was already shown before that Co/Ni multilayers have very good properties for spintronics applications, but up until now it wasn't clear if the films have a sufficiently large intrinsic spin polarization, which is necessary to create and maintain spin-polarized currents in spintronic devices. It was now shown that the films have a spin polarization of about 90% - which is similar to the best spintronic materials.