Spin Transfer Technologies and Tokyo Electron to co-develop next-gen STT-MRAM devices

Spin Transfer Technologies (STT) announced that it has signed an agreement with Tokyo Electron (TEL) to collaborate on the development of next-generation SRAM and DRAM-class STT-MRAM devices.

Spin Transfer Technologies says that the combination of its STT-MRAM technology with TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.

Spin Transfer Technologies raised $22.8 million via a convertible bridge facility

Spin Transfer Technologies announced that it has raised $22.8 million via a convertible bridge facility. STT says that this will help the company get ready to complete its Series B funding round, targeting strategic investors and planned to conclude by end of Q1 2018.

In January 2017 STT announced that it has started to deliver fully functional ST-MRAM samples to customers in North America and Asia. The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

Spin Transfer Technologies fabricated 20nm OST-MRAM MTJs, preparing to deliver samples

Spin Transfer Technologies (STT) announced that it fabricated 20nm perpendicular MRAM magnetic tunnel junctions (MTJs) based on the company's Orthogonal Spin Transfer MRAM (OST-MRAM).

STT is now preparting to deliver OST-MRAM samples to select customer, following requests from "certain major semiconductor and systems companies". The company is processing more than 40 wafer lots at its R&D fab in Fremont, California.

Spin Transfer Technologies produced working 60-nm STT-MRAM prototypes

Spin Transfer Technologies (STT) has successfully produced a working prototype STT-MRAM device. The company's advanced prototyping magnetics processing line at its facility in Fremont, California, is now fully operational.

STT's prototypes incorporate proprietary, performance-enhancing ‘spin-filtering’ technology, and were fabricated on industry standard CMOS wafers sourced from a high volume Asian foundry supplier. The prototypes are based on 60-nm perpendicular magnetic tunnel junction devices

Crocus says it prevailed in their patent case against spin transfer technologies

In November 2013, Crocus Technology filed an Inter Partes Review petition to the US PTO, claiming that Spin Transfer Technologies's US patent #6,980,469 describes a technology already used in prior art, in particular in the patent portfolio of Crocus. In April 2014, the USPTO issued a preliminary decision in favor of Crocus' petition.

Crocus now says that it has prevailed in the Inter Partes Review of the patent. Crocus petitioned to cancel all or part of the patent as Crocus’s patent portfolio includes a patent on this technology that makes advanced non-volatile memory blocks more efficient. After careful consideration, the Patent Trial and Appeal Board of the US Patent and Trademark Office issued its final written decision cancelling or finding unpatentable all but three claims of the ’469 patent.

Crocus says the USPTO ruled a favorable preliminary decision in their case against STT's patent

In November 2013, Crocus Technology filed an Inter Partes Review petition to the US PTO, claiming that Spin Transfer Technologies's US patent #6,980,469 describes a technology already used in prior art, in particular in the patent portfolio of Crocus.

Crocus Technology now says that the USPTO issued a preliminary decision in favor of Crocus' petition - saying that there is a “reasonable likelihood” that Crocus will prevail with respect to its challenge. The patent in question describes a high-speed low power magnetic devices based on current induced spin-moment transfer.

Crocus files a petition to the US PTO saying that an STT patent should be cancelled

Crocus Technology filed an Inter Partes Review petition to the US PTO, claiming that US patent #6,980,469 describes a technology already used in prior art, in particular in the patent portfolio of Crocus. The patent in question describes a high-speed low power magnetic devices based on current induced spin-moment transfer, and is owned by New York University (although crocus says in their PR that it is owned by Spin Transfer Technologies (STT).

Crocus currently holds 154 patents, describing their Magnetic Logic unit (MLU) design and manufacturing as well as generic technologies like STT (Spin Torque Transfer).

Spin Transfer Technologies appoints Barry Hoberman as chairman and CEO

Spin Transfer Technologies (STT) announced that Barry Hoberman has been appointed as CEO and Chairman of the board. Barry was Crocus Technology's chief marketing officer, and we interviewed him in January.

Back in February STT announced that they raised $36 million to accelerate the development of its patented orthogonal spin transfer magneto resistive random access memory technology (OST-MRAM) - by scaling operation, hiring new employees and purchasing equipment. Back in October 2008 we have interviewed Vincent Chun, who was then the executive in charge at STT.