Samsung and Hynix to launch STT-MRAM JV in September, expect the chip to mature around 2012

Samsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).

The companies said they will engage in joint research and development (R&D) of spin-torque-transfer magnetic-random-access-memory (STT-MRAM) chips, and become the industry standard-setters for the next generation 450mm wafer fab market.

They added that if the joint R&D venture on STT-MRAM is successful, the companies will be able to fend off Japanese competitors trying to regain dominance in the semiconductor sector and generate an estimated $500 million worth of royalty earnings.

The global market for the new chip is expected to mature around 2012.

Read the full story Posted: Jun 25,2008

Samsung and Hynix to jointly develop STT-MRAM

Samsung Electronics and Hynix Semiconductor, the world's two largest memory chip manufacturers, have agreed to join hands to develop the next generation of semiconductors so that South Korea can stay competitive with its foreign rivals.

Under the three-stage plan A total of about 50M$ will be spent to design and build futuristic chips such as the spin-torque-transfer magnetic-random-access-memory (STT-MRAM) and various non-volatile memory devices.

Read the full story Posted: Jan 24,2008