NVE Notified of Grant of Magnetothermal MRAM Patent

NVE Corporation announced today that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The patent is number 7,177,178 and is the grant of a patent under the application published by the USPTO as number 2006-0083056. The grant is in addition to patent number 7,023,723, which is similarly titled and was granted in April 2006. The invention of the new patent relates to dual-film MRAM cells.
Read the full story Posted: Feb 13,2007

New Magnetic tunnel junctions for MRAM devices patent for IBM

IBM has recieved a new patent, titled - "New Magnetic tunnel junctions for MRAM devices".

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.

Read more here (Patent application)

Read the full story Posted: Dec 13,2006

NVE notified of new MRAM patent

NVE Corporation said that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant today of a patent relating to Magnetoresistive Random Access Memory (MRAM). The patent, titled "Magnetoresistive Memory SOI Cell," is number 7,148,531 and is the grant of a patent under the application published by the USPTO as number 2005-0242382.
 
NVE's invention relates to MRAM incorporating silicon-on-insulator (SOI) materials. The invention could allow smaller MRAM cells and lower power consumption by reducing the electrical current required to write data to the memory cells.

Read  more here 

Read the full story Posted: Dec 13,2006

NVE Notified of Patent Grants

The Two-Axis Magnetic Field Sensor is patent number 7,054,114, and is the grant of a patent under the application published by the USPTO as number 2004-0137275. The invention is for a spintronic device that can detect the magnitude and orientation of magnetic fields. Applications for such devices might include Magnetoresitive Random Access Memory (MRAM), or military, industrial, and medical sensors.

Read more here 

Read the full story Posted: May 30,2006

NVE Notified of Grant of Patent Relating to Magnetothermal MRAM

NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The grant is in addition to patent number 6,963,098 titled "Thermally Operated Switch Control Memory Cell," which was granted in November 2005, as well as other NVE patents relating to MRAM and magnetothermal MRAM.

Read the full story Posted: Apr 04,2006

NVE Notified of Magnetothermal MRAM Patent Grant

NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a key patent for magnetothermal Magnetoresistive Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Thermally Operated Switch Control Memory Cell," will be issued today. The patent is number 6,963,098 and is the grant of a patent under the application published by the U.S. Patent and Trademark Office as number 2005-0002267.
Magnetothermal MRAM uses a combination of tiny magnetic fields and ultra-fast heating, both from electrical current pulses to reduce the energy required to write data and reduce the size of memory cells while maintaining thermal stability. This has the potential to enable low power, dense MRAM. NVE has two previously announced magnetothermal MRAM development contracts with Department of Defense agencies, both with a goal of showing the design feasibility of one-gigabit magnetothermal MRAM chips.

Read more here

Read the full story Posted: Nov 08,2005

Micromem Inc, Inks Exclusive Licensing Agreement with University of Toronto

Micromem announced today that they have signed an agreement with the University of Toronto (UT) giving Micromem exclusive world wide rights to all MRAM technology developed at the University and funded on behalf of Micromem Technologies. This proprietary technology was initially discovered and developed under collaborative research projects led by Professor Harry Ruda of the University of Toronto and co-funded by Micromem Technologies and two divisions of the Ontario Center of Excellence which include the Materials Manufacturing division of Ontario (MMO), and the Communications and Information Technology division of Ontario (CITO).

The license agreement with the University allows Micromem access to this MRAM technology on favorable financial terms, and provides Micromem substantially greater benefit than the company's previous licensing agreement with Estancia.

The deal gives Micromem full control over the last three years of technological innovation including the development of the single bit memory prototype announced last February. The company now has worldwide exclusivity on all prior, current, and future patent applications relating to this MRAM technology.
In addition the agreement strongly positions Micromem to explore industrial partnerships to accelerate the development and availability of commercial MRAM products.

Read the full story Posted: Jul 14,2005

NVE Notified of Patent Grant on Spintronic Structure

NVE announced that it has been notified by the U. S. Patent and Trademark Office that the patent titled "Magnetic Field Sensor with Augmented Magnetoresistive Sensing Layer" will be issued today. The patent relates to the use of an effect known as "electron spin exchange-biasing" for low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance (GMR) sensors. The patent is number 6,872,467 and is the grant of the application published by the U.S. Patent and Trademark Office under number 2004-0115478.
SDT and GMR sensors applications include magnetic disk read heads and MRAM. The invention reduces hysteresis, which can cause errors and signal loss.
"This is an important sensor innovation," said NVE Founder and Chief Technology Officer James M. Daughton, Ph.D. "It enables better linear magnetic field sensors and could have wide applications."

Read more here

Read the full story Posted: Mar 29,2005

Micromem Technologies Inc. Files Broad Based MRAM Patent

The patent application was filed January 31, 2005 and will help to secure the company in its go forward strategy. This strategy relies on innovations made by the company through the work of Professor Harry Ruda, the University of Toronto and its collaborators. This patent filing encompasses compositions of matter as well as methods of making an MRAM device.

"This most recent filing will serve as a keystone in our patent portfolio as the company places great importance on its patent portfolio strategy. MRAM is undoubtedly a competitive industry and therefore we will continue to pay great attention to securing our business in that space," said the company's CTO, Dr. Cynthia Kuper.

Read the full story Posted: Feb 24,2005