Crocus announced that they have successfully integrated their Thermally Assisted Switching (TAS)-based MRAM technology into TowerJazz’s 0.13-micron CMOS process. Crocus hopes to get samples manufactured in the "very near future", with mass production starting in 2H 2011. The first chips will probably offer 1-Mbit of storage. TowerJazz and Crocus have been working towards TAS-MRAM production since June 2009.

To achieve this milestone, a number of critical technological problems were solved, particularly in the areas of deep submicron lithography of magnetic tunnel junction (MTJ) stacks and the selection of materials for high device reliability. The newly developed technology adds only four masks to conventional CMOS manufacturing flows and is suitable for both standalone and embedded memory applications. The integration into TowerJazz’s copper-based 130nm CMOS logic process sets the stage for the market introduction of leading edge single chip memory products and embedded MRAM IP blocks to be used in complex Systems-On-Chip (SOC) for microcontroller, automotive and communications applications.

Everspin is introducing a new family of MRAM products, with a Serial Peripheral Interface (SPI) bus. The new family is called MR24H and includes 256Kb, 512Kb and 1Mb products. These Everspin MRAM devices require no write delay, run at clock speeds as fast as 40 MHz and have unlimited endurance with more than 20 years data retention. 

The MR25H256 (256Kb), MR25H512 (512Kb) and MR25H10 (1Mb) serial MRAM products operate from  2.7 to 3.6 volts while offering low standby and operating currents as well as a 3 uA (typical) sleep mode to further improve the system power consumption. They are byte-organized internally, containing 32KB, 64KB and 128KB of data respectively. Industry-standard serial SPI command codes and timing enable easy connection to existing MCU and system designs. The devices are housed in low profile 8-pin RoHS-compliant DFN packages that are pin-out and footprint compatible with serial EEPROM, Flash and FeRAM products in comparable DFN or SOIC packages.

Avalanche Technology and Integral Solutions International (ISI) have designed a Wafer Level Analyzer, the WLA-3000, to be used in STT-MRAM development.

The WLA-3000 includes specific hardware test modules including nS-range Pulse Generator that quickly measures switching currentse of MTJ devices in STT-MRAM as a function of Pulse Width. Using this Pulse Generator module, customers will be able to perform Error Rate, Switching Probability, Endurance Testing, and Read/Write Disturb analysis in a fraction of time as compared to other slower pulsers.

The WLA-3000 system is fully compatible with ISI’s FMRA-2008 Ferromagnetic Resonance Analyzer to offer the worlds most advanced and complete MTJ sensor analysis.

Riber has launched a new innovative robotic system, the MPVD300 reactor.  Based on a high vacuum deposition system (UHV) and compatible with existing silicon FAB industry standards, the MPVD 300 provides unrivalled precision of control and composition uniformity defects of less than 1% over 300mm (monoatomic layer precision).

Riber sayst he new machine willhelp make new ultra-fast microprocessors and high-capacity MRAM.

Fully automated, Riber's MPVD300 is the only modular system for high vacuum deposition that can beconnected up directly to the silicon production line. The first system will be shipped in July to a major manufacturer in Asia.

Crocus announced today that it has implemented CIPtech, the newest tool from CAPRES A/S, for enabling measurements associated with advanced Spin Torque Technology (STT). This unique new tool, designed especially for the MRAM and magnetic recording Read Head industries, enables Crocus to determine tunneling resistance on MTJ films prior to final test. With this upgrade, measurement that used to require weeks of sample preparation can now be performed within minutes.

The CIPTech platform is used for measuring the critically important tunneling resistance and magneto-resistance (RA MR) directly on blanket magnetic tunnel junction (MTJ) films for MRAM (Magnetic Random Access Memory) and magnetic recording Read Head applications. The latest vertical magnetic field capability of the tool allows characterizing next-generation MRAM devices based on Spin Torque Transfer (STT). With this tool, Crocus is now equipped for efficient prototyping and manufacturing of advanced STT.

As we reported last month, Crocus is planning to have MRAM products by the end of the year, and are also working on STT-RAM.

 

Grandis today announced their 300-millimeter magnetic tunnel junction (MTJ) fabrication facility (Fab) in the US dedicated to STT-RAM. Grandis is now able to incorporate STT-RAM into its customers' most advanced semiconductor processes on 300mm wafers.

Grandis' MTJ Fab can now handle both 200mm and 300mm customer wafers. In a multi-million dollar investment, key equipment for depositing and annealing MTJ memory elements, the critical building blocks for STT-RAM, was purchased. Since Grandis' new licensees are often not familiar with fabricating MTJ elements and do not possess the associated fab equipment and know-how, the MTJ Fab's main purpose is enable licensees to incorporate Grandis' MTJ elements into their CMOS wafers at the earliest possible stage in the development cycle, thereby accelerating their STT-RAM development and reducing their time-to- market. The MTJ Fab also enables Grandis to conduct leading-edge R&D on new magnetic materials and MTJ elements targeted at further reducing STT-RAM write current and die size. As these new materials, structures and processes are proven, they are transferred immediately to licensees' production fabs.

Aviza Technology, a supplier of advanced semiconductor capital equipment and process technologies for the global semiconductor industry and related markets, today announced the introduction of StratIon(TM) fxP, the world's first 300-mm ready Ion Beam Deposition system.

The first system was shipped to CEA-LETI-MINATEC in Grenoble, France, one of Europe's foremost applied research centers in electronics and Spintronics. The StratIon fxP will be used to develop next-generation magnetic tunnel junction (MTJ)-based devices for applications including MRAM, hard disk drive read heads or RF components. The system will also be used for the deposition of metal gates for advanced CMOS processes. In addition to the system shipment, Aviza and CEA-LETI have signed a three year joint development program covering the development of MTJ deposition processes for future MRAM and Spintronics devices.

Crocus Technologies today announced that it has qualified its complete manufacturing environment for the development and rapid prototyping of MRAM. Building upon conventional 130nm CMOS sourced at a leading foundry, Crocus is leveraging Silicon Valley-based SVTC's capabilities to complete the integration of its second-generation MRAM technology. To complement these two facilities and achieve a complete MRAM manufacturing capability, Crocus has invested more than 5 million Euros to purchase and deploy a full suite of dedicated magnetic-technology wafer processing tools for the deposition, annealing, patterning, and metrology of MRAM memory chips. With this investment and these achievements, Crocus has positioned itself as one of the very few companies in the world capable of fully integrating advanced MRAM onto CMOS.

Crocus' proprietary MRAM technology solves all the well-known problems encountered in earlier MRAM developments. The company's technology has demonstrated its stability, reliability, data retention, endurance, and scalability, while exhibiting high speed, low power dissipation, and excellent resistance to external perturbation.

"We found at SVTC an ideal incubation and development environment," said Jean Pierre Braun, founder and CEO of Crocus Technologies. "SVTC is a modern foundry that provides a broad range of necessary equipment and processes. Furthermore, we have been able to install some of our own equipment in SVTC's clean room, and we have deployed a complete, full-time Crocus team there. This has allowed us to develop and integrate our proprietary MRAM manufacturing process with outstanding efficiency while maintaining full confidentiality of our IP and know-how."

"SVTC's independent development foundry model is a great fit for companies working to commercialize novel technologies as quickly as possible, while maintaining strong intellectual property positions," said Scott Marquardt, VP of Marketing at SVTC.

Samsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).

The companies said they will engage in joint research and development (R&D) of spin-torque-transfer magnetic-random-access-memory (STT-MRAM) chips, and become the industry standard-setters for the next generation 450mm wafer fab market.