In June 2017 it was reported that Taiwan Semiconductor Manufacturing Company (TSMC) will start producing embedded MRAM in 2018 using a 22 nm process. In what may bet he first adoption of TSMC's eMRAM technology, AI accelerator startup Gyrfalcon Technology announced the commercial availability of its LightSpeeur 2802M, AI ASIC that include TSMC's eMRAM.

The 2802M ASIC has 40MB of eMRAM memory, which can support large AI models or multiple AI models within a single chip. Applications include image classification, voice identification, voice commands, facial recognition, pattern recognition and more.

SMART Modular Technologies has launched its new nvNITRO U.2 Storage Accelerator that features Everspin's STT-MRAM technology. The nvNITRO is ideally suited for synchronous logging applications such as those used for financial trading.

SMART's nvNITRO U.2 Storage Accelerator uses a standard NVMe interface that is 1.2.1 compliant and provides less than six microseconds of industry-leading low latency access with persistence so that all logging data is safe. The U.2 form factor brings with it the advantage of being hot-swappable.

A couple of days ago, Everdisplay disclosed its first major design win with a "top enterprise storage vendor" for its 40nm 256Mb STT-MRAM chips. We now know that this vendor is IBM - as it introduced its latest-generation enterprise SSD FlashSystem, which indeed includes Everspin's STT-MRAM.

Using MRAM instead of DRAM memory enabled IBM to remove the relatively large supercapacitors (used to make the DRAM non-volatile) and so the company was able to reduced the size of its drives and switch to a standard 2.5-inch U.2 drive form factor. The new FlashSystem SSDs support up to 19.2TB of 64L 3D TLC NAND. IBM's system uses a 20-channel NAND interface and a four-lane PCIe 4.0 host interface that can operate in dual-port 2+2 mode.

Everspin announced that it will demonstrate its latest MRAM technologies at the Flash Memory Summit 2018 which starts today.

In its PR, Everdisplay discloses its first major design win with a "top enterprise storage vendor" for its 40nm 256Mb STT-MRAM chips. Everspin says that MRAM enabled the vendor to achieves new levels of performance, storage capacity and reliability.

SMART Modular Technologies announces that it has began shipping its new 1Gb nvNITRO Accelerator Card that features MRAM technology. These new nvNITRO cards use Everspin's STT-MRAM chips. SMART says that nvNITRO is ideally suited for the most demanding transaction logging applications and is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.

SMART further says that the new cards enable a system application to write or log large amounts of data at the full performance of incoming data and provides extremely low and highly consistent read latencies of under 10µs. Because of the non-volatility of the MRAM chips, these cards do not need any power source such as super capacitors or batteries.

In March 2017 Everspin announced its nvNITRO line of storage accelerators, with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips. Everspin is accepting orders for these accelerators which should start shipping by the end of the year.

In the video above you can see a recent demonstration by Everspin of how these nvNITRO accelerators provide superior latency determinism enabling a Low Latency Write Buffer for applications such as Apache Log4J.

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

Seagate demonstrate several new prototypes and technologies at Flash Memory Summit last week, and one of these is the new Nytron 5000B SSD drive that is a high-performance boot drive. The new device has 256GB of 3D MLC NAND and makes use of 1258MB of Everspin's STT-MRAM in addition to a "normal" DRAM cache.

Seagate says that the MRAM can be used as either a write cache for user data or it can be exposed directly as a separate storage namespace for explicit tiered storage. Seagate said that this is currently just a test-platform prototype - and not a preview of an upcoming product.

Everspin announced its nvNITRO line of storage accelerators back in March 2017, and the company now announces that it has officially launched the new accelerators with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips.

Everspin is accepting orders for the new products, which will ship in Q4 2017. The nvNITRO accelerators operate up to 1.5 million IOPS with 6μs end-to-end latency. Everspin is delivering a half-height, halflength (HHHL) PCIe card as well as U.2 form factors; both support NVMe and memory mapped IO (MMIO) access modes.

Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory. Everspin licensed its technology global foundries which will offer this as part of its 22FDX platform.

The 22FDX platform targets emerging applications such as battery powered consumer devices, IoT, Advanced Driver Assistance Systems (ADAS) and Vision Processing. Customers of Global Foundries will now be able to embed MRAM memory in next-generation SoC and MCU based producers.