Micromem Technologies Inc. First Foundry MRAM Manufactured

Micromem Technologies is pleased to announce that it has successfully manufactured foundry grade fully functioning MRAM cells. This culminates an intensive three-year research and development proof of concept phase followed by a foundry phase focused on manufacturability and scalability of our MRAM product. The first phase of the foundry process will be completed in January 2008. Our development team at Strategic Solutions is to be applauded for working closely with the California -based foundry Global Communication Services (“GCS”) to meet the aggressive schedule that the Company initiated in the fall of 2007.

Reference is made to the September 17, 2007 press release wherein the Company described the Reticle Design and Test Plan. The initial foundry phase has generated an extensive amount of statistically validated MRAM performance data in accordance with the scheduled Test Plan. During January 2008 the Company will be analyzing this large data set. Initial data review indicates that the Test Plan was successful and the data set is rich with scala ble data that indicates a clear path to an optimized MRAM cell design.

Read the full story Posted: Dec 23,2007

Micromem - Functioning Manufactured MRAM by the End of 2007

Micromem is pleased to announce another major milestone has been met in the manufacturing of their MRAM. Based on this early success the foundry has been authorized to assemble the complete memory structure.

The Hall Sensor forms an integral component of the Micromem MRAM design. The Hall Sensor is used to measure the external field of a magnet whose magnetization can be reversed by generating a current in a coil.

 Several Hall Cross sensor devices were manufactured at various features sizes as we drive the overall MRAM cell feature size to the limits of the GCS foundry. Micromem successfully manufactured and tested a Hall Cross Sensor device that functions precisely in accordance with the University of Toronto sensitivity model, notably the following:

    -  The sensor demonstrates excellent linearity
    -  The magnetic field reversal yields symmetrical V(Hall) within
       expected tolerances
    -  I (bias) reversal yields symmetrical V(Hall) within expected
       tolerances.

"What this means for the foundry phase is that Micromem's Hall Cross Sensor device is extremely accurate, repeatable and linear, all necessary features for a memory design. The results have exceeded our expectations. As a result of the tremendous performance, we plan to also use the Hall Cross Sensor devices as credible on-wafer sensors to evaluate our optimization efforts for the placement of the magnetic yoke structures," says Steve Van Fleet, Project Director.

Having exceeded the test requirements on the Hall Cross Sensor device, we have authorized the foundry to accelerate their efforts on the complete MRAM cell manufacturing. We will have an additional update on actual memory cell testing prior to December 25, 2007.

As a result of this positive test data we have defined the first MRAM array sizes that we are targeting. These have been defined in concert with some of our interested end users who will ultimately utilize our memory. Our initial target MRAM array sizes are 40 bits, 256 bit, 512 bits and 1024 bits. In addition to these high-speed memory size requirements, we have been requested to design to a 16K bit memory array of low speed embedded memory. This will be used for identification purposes only where radiation hardened is the key parameter and typically high speed memory read write time is not critical.

Read the full story Posted: Nov 14,2007

Micromem has closed additional $400,000 financing

Micromem Technologies Inc. (OTC BB: MMTIF) is pleased to announce that it has raised $400,000 by way of arms length private placements ranging from $0.45-$0.48 per share. The shares issued will be subject to Rule 144. These funds are in addition to the previously announced financing dated October 18, 2007. These funds will be used to further the company's effort to commercialize its patented MRAM technology for a wide variety of uses beyond RFID applications. No commission was paid on this financing.


With respect to the company's previously announced financing efforts, management will continue to pursue this opportunity.

Read the full story Posted: Nov 06,2007

Micromem Notes Foundry Milestone - Successful Magnetic Production Scaling

Micromem Technologies is pleased to announce a material progress update on our commercialization of our MRAM. Micromem and Global Communication Semiconductors, Inc. (GCS) have successfully patterned and processed our own magnetic yoke design. This is significant in that this production-level process produced an extremely clean magnetic storage element (below, less than 1/10th the width of a human hair) while at the same time starting a march down a path of memory size reductions and lower cost-per-bit. The scanning electron microscope image illustrates the superior quality of the GCS foundry and its team of engineers.

The process of establishing the function and scalability of the multi-bit MRAM has followed a sequence of first productizing the magnetic storage element (the “yoke”), followed by Hall Cross Sensor characterization, and finally integrated MRAM bit cell performance. With this very successful demonstration of the magnetic structure, Strategic Solutions has characterized the relative efficacy of two alternative methods: electroplating  ersus sputter deposition, as they relate to the ultimate manufacturing of MRAM product in a dense multi-bit array.

Similar data and a milestone for Hall Cross Sensors should be seen in November. A demonstration of a fully integrated MRAM storage cell is expected by year end. Micromem is in discussion with a major military-focused company that provides GaAs space-based platforms. Discussions are centered around the proposed MRAM architecture and how it will benefit their current product line in a dense memory array format.

Read the full story Posted: Nov 02,2007

Micromem closes 500K$ financing

Micromem Technologies is pleased to announce that it has raised approximately $505,000 by way of arms length and non-arms length private placements at $0.45 per share. The shares issued will be subject to Rule 144. This private placement was subscribed for on October 9, 2007 and was further ratified by the Board of Directors meeting held on Thursday, October 11, 2007. In addition to advancing Micromem’s technology with Global Communications Semiconductor, Inc., these funds are being used to retire the previously announced bridge loan.
Read the full story Posted: Oct 23,2007

Micromem: MRAM wafers are in production

Micromem is pleased to announce that as of September 20 2007 the MRAM wafers are in production in the global Communications Semiconductor, Inc. (GCS) foundry. On September 17, 2007 Strategic Solutions, a design partner of Micromem, released the approved reticle design to the foundry. The reticle design incorporates an extensive matrix of tests to be  performed on the Micromem MRAM bit structure as it is processed through the foundry. By October 29, 2007 the reticle test matrix will yield valuable information of the MRAM  scalability, power consumption, read write speed and cross talk separation. Micromem is also planning additional radiation hardening test that will validate and supplement similar  testing previously communicated in our May 24, 2007 press release.

Steven Van Fleet, Micromem’s Project Director for this foundry phase stated “The entire team, Strategic Solutions, GCS and Micromem are extremely pleased with the foundry plan, schedule and reticle test plan. Gallium Arsenide (GaAs) is proving to have been a wise choice for our targeted applications. GaAs has two distinct advantages over silicon: speed and power. For the same power dissipation, a GaAs circuit is faster, at the same speed, the power in a GaAs circuit is usually lower. This is key to our targeted markets.”

“Military applications lead the list of interested joint development partners. The modern warfare soldier carries a lot of devices that require heavy batteries. If Micromem’s MRAM requires lower power dissipation, meaning lower battery weight, this will be a huge market opportunity for us” Van Fleet went on to say. The company anticipates meeting a lower power requirement.

“We are in discussions with companies that share similar needs in satellites, particularly phased array satellites. These sate llites require array based calibration memories that need to be close to the satellite and not housed in metal shielded boxes like silicon based memory. We remain encouraged that our MRAM rad hardness will survive where silicon memory performance continues to be challenged”

The foundry schedule is aggressive. We will complete Phase 1 of the foundry by early January 2008. After October 29, 2007 we should have the first set of available test data. Once we achieve our predicted target we will begin to execute application specific development plans for military and other niche application devices that will benefit from our MRAM memory. We hope to begin a collaboration with these development partners in early November, Micromem will then be in a position

Read the full story Posted: Sep 25,2007

Micromem Engages Global Communication Semi as its Foundry in the next step of commercialization

Micromem Technologies is pleased to announce that it has engaged Global Communication Semiconductors, Inc. (GCS), for its next stage of MRAM development. GCS is a California based compound semiconductor pure-play wafer foundry that provides services to the RF wireless communication sector, telecommunication and high-speed networking, optoelectronics and photonics industries. As the premier gallium arsenide foundry in North America, GCS provides foundry services to leading companies in a variety of industries ranging from RF wireless and infrastructure, optical fiber communication, aerospace and defense to medical devices.
 
“We are very pleased to be working with Micromem and taking its technology from the laboratory and moving it towards commercialization and ultimately production”, said Jerry Curtis, President and CEO of GCS.
 
This is a milestone achievement for Micromem as it takes the company’s technology out of the laboratory and shifts it into a manufacturing facility. GCS will design and build a commercial MRAM device utilizing Micromem’s patented technology. Micromem and GCS will work closely with specific potential partners, using their specifications, to design a commercial product that can be brought to market. Micromem anticipates on commencing
fabrication by the end of this year.
Read the full story Posted: Sep 18,2007

Micromem on track to raise 8.5M$

Micromem Technologies has received very encouraging feedback regarding its financing efforts in Europe. The company has been advised by the agent they have encountered no issues with  completing the financing. In a previously announced press release, it remains the company’s intention to raise US$8,500,000. The agent reserves the right to close in tranches.

A portion of  the funds have been earmarked to engage an identified U.S. based foundry that will enable the company to accomplish its commercialization plans. The purpose of the foundry is to design  and build a commercial MRAM device utilizing Microme m’s patented technology.

Read the full story Posted: Aug 09,2007

Micromem tests Radiation Hardness with great success

Micromem Technologies announced today that it has achieved success in tests of radiation hardness on its device components. Samples prepared by Dr. Harry Ruda at the University of Toronto were exposed to various levels of Cobalt 60 gamma radiation. This form of radiation is one of the toughest forms and even after exposure at the highest  levels of radiation the materials performed perfectly.

Samples of pHEMT (High Electron Mobility Transistor structures) GaAs were prepared to mimic the bit cell environment of the company’s Hall Sensing MRAM. The samples were then sent for exposure to Cobalt 60 gamma radiation in an industrial medical device sterilization chamber.

The samples were exposed to three different doses of radiation as follows (each dose is reported within +/- 5 kGy):
    Low level: Min. 26.371 kGy to max. 31.603 kGy
    Mid level: Min. 45.163 kGy to Max. 52.005 kGy
    High level: Min. 95.139 kGy to Max. 112.747 kGy


Researchers at the University of Toronto then tested the samples. The test concluded the device’s functioning and capabilities remained unaltered by even the highest level of radiation exposure. These initial results were taken at room temperature. The only effects of the radiation exposure that could be seen were at temperatures below -70ºC. During actual use the device would not be exposed to such extreme temperatures.

The measurements showed that the samples made highly sensitive Hall sensors and were able to function as a memory element after dosing with high levels of radiation.

The next steps have already begun which include making and testing fully integrated bit cells fabricated at the University of Toronto. The company plans to move forward with its testing by fabricating scaled samples inside a fabrication facility. These scaled prototypes will be tested for use as radiation hardened memo ry components for sale into the medical device industry, as well as aerospace, defense and pharmaceuticals.

Read the full story Posted: May 25,2007

Micromem signs Strategic Solutions accelerating lab-to-fab commercialization effort

Micromem today announced that it has retained the services of Strategic Solutions, a California-based engineering firm specializing in "lab-to-fab" transitions, to continue Micromem's pursuit of commercializing its HCS MRAM technology.

The engineers at Strategic Solutions will work directly with Micromem's Chief Technology Officer, Dr. Cynthia Kuper, to road map Micromem's HCS MRAM and to fabricate the memory.

This road map provides specific information on what types of memory products HCS MRAM can replace and estimates the specific price points for given applications. Strategic Solutions also provides detailed specifications on the functioning of HCS MRAM as it scales and delivers discrete project plans and milestones for each step in the productization process.

Read the full story Posted: Aug 09,2006