Submitted by Ron Mertens on Sun, 12/16/2007 - 17:40

Spin Memory logoSpin Memory (previously Spin Transfer Technologies), established by established by NYU and Allied Minds, is developing STT-MRAM devices based on its Orthogonal Spin Transfer MRAM (OST-MRAM) technology.

In November 2018 Spin Memory licensed its Endurance Engine MRAM technology to Arm. In 2016 Spin Memory produced 20nm OST-MRAM MTJs, and said it is preparing to start delivering samples to select customers. In 2015 the company raised $70 million (in addition to $36 million raised in 2012) and in November 2018 the company announced its $52 million Series B funding round.

Back in October 2008 we have interviewed Vincent Chun, who was then the executive in charge.

Company Address

45500 Northport Loop West
Fremont, CA 94538
United States