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Last updated on Sat 07/12/2024 - 08:23

Hynix and Samsung to co-develop STT-RAM in a $40 million project

The Korean Government has decided to fund STT-RAM research for Hynix and Samsung in a $40 million project. The government will pay around half of the sum for the project, which is intended to run till 2014. The project calls for the government to work with Samsung and Hynix together for research and development on STT-MRAM chips. Korea aims to control around 45% of the 30-nano type memory chip market by 2015.

The companies have already opened a new laboratory at Hangyang University's fusion technology center. It is already equipped with a fully operational 300mm magnetic thin film deposition system and other chip-making facilities.

Read the full story Posted: Nov 26,2009

Samsung has started to produce 512Mb Phase-Change memory

Samsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%.

The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.

Read the full story Posted: Sep 23,2009

Samsung and Hynix to jointly develop STT-MRAM

Samsung Electronics and Hynix Semiconductor, the world's two largest memory chip manufacturers, have agreed to join hands to develop the next generation of semiconductors so that South Korea can stay competitive with its foreign rivals.

Under the three-stage plan A total of about 50M$ will be spent to design and build futuristic chips such as the spin-torque-transfer magnetic-random-access-memory (STT-MRAM) and various non-volatile memory devices.

 
Read the full story Posted: Jan 24,2008