Samsung

Custom AI ASIC solutions provider SEMIFIVE, together with China-based AI semiconductor developer ICY Tech, announced the successful tape-out of its next-generation Edge AI SoC jointly developed utilizing Samsung Foundry's 8nm (8LPU) embedded MRAM technology. The two companies say that this is a significant milestone toward the first commercial deployment of 8nm eMRAM technology in Asia.

SEMIFIVE that by integrating eMRAM into its Edge AI accelerator, it aims to reinforce its technical leadership in the ultra-low-power, high-performance inference market. 

Samsung Electronics announced that it is the world's first company to successfully developed an 8 nm process for next-generation MRAM production, and has achieved yields suitable for mass production.

Samsung says that its new 8nm MRAM demonstrated a 62.5% faster write speed and an 11.5% higher density compared to its previous 14nm generation, while also meeting the highest automotive-grade reliability standards under extreme conditions. 

In 2019, Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28 nm FD-SOI process. In 2021, Samsung announced it is working to scale down to 14 nm processes.

The company now says that it has finalized the development of its 14 nm eMRAM process, and will be read to mass produce it by the end of 2024. The company says that the 14 nm process achieve a 33% area scaling compared to its 28 nm process, and it also enables a 2.6x faster read cycle time. Samsung says that its eMRAM enables the smallest size 16MB memory die.

At the 2023 MRAM Forum, a key event by the IEEE Magnetics Society tied to the IEDM conference, Mr. Noh, Chief Technology Officer at Netsol, provided an overview of the company's advancements in MRAM technology.

Mr. Noh introduced Netsol's development of its first standalone MRAM, created using 28nm eMRAM technology from Samsung Foundry. He presented the technical characteristics of the product, focusing on its data retention, endurance,  resistance to magnetic interference and quality, which have been validated through extensive testing.

Researchers from Samsung will soon present at IEDM 2022 a new research paper that will discuss the company's latest achievements in scaling down its MRAM technology to the company's 14nm FinFET logic process.

The Samsung researchers produced a stand-alone memory with a write energy requirement of 25 pJ per bit and active power requirements of 14 mW for reading and 27 mW for writing at a 54Mbyte per second data rate. The cycling  is 10^14 cycles and when scaled to a 16Mbit device, a chip would occupy 30 square millimeters.

Researchers from Samsung's Advanced Institute of Technology (SAIT), have demonstrated what they say is the world’s first in-memory computing based on MRAM, targeting next-generation AI chips.

The researchers explain that In-Memory computing is a new paradigm that seeks to perform both data storage and data computing in a memory network. In such a computing system, a large amount of data, stored in the memory network, can be executed in a highly parallel manner. Power consumption in such systems is substantially reduced.

In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28nm FD-SOI process. In early 2021 Samsung announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications, and today, at the company's 5th Annual Samsung Foundry Forum, Samsung provides more details on its MRAM roadmap.

Samsung says it is advancing its 14 nm process which will support flash-type embedded MRAM which enables increased write speed and density. Samsung targets applications such as micro controller units (MCUs), IoT and wearables for its next-gen eMRAM.

In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. The company now announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications.

Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets.

Mentor announced that it will provide a unique IC test solution for the Arm's eMRAM compiler IP which is built on Samsung Foundry’s 28nm FDSOI process technology.

Mentor says it is working with Arm to leverage industry-leading Tessent software Built-In Self-Test (BIST) Design-for-Testability (DFT) technologies for testing the next-generation of Arm's eMRAM compiler IP in development.

Samsung announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. Samsung says that its eMRAM memory module offers higher performance and endurance when compared to eFlash, and can be integrated into existing chips.

Samsung details that its eMRAM is 1,000 times faster than its eFlash memory, and it does not require an erase cycle before writing data (unlike Flash memory). The voltage used is also lower - and in total eMRAM consumes 1/400 the energy compared to eFlash for the writing process. Samsung's MRAM capacity, though, is lower than its 3D Xpoint, DRAM and NAND flash.