Researchers from Tohoku University demonstrate the world's lowest write power SOT-MRAM device

A team of researchers at Tohoku University have achieved the world's lowest write power SOT-MRAM device, that is also offering an extremely fast write time.

The researchers focused on the tilt angle of the canted SOT device and the magnetic anisotropy of the free layer, using micro-magnetic simulation to reduce the write power. The have achieved a write power of 156 fJ in 75° canted SOT devices fabricated using a 300mm wafer process. 

The team further  demonstrated that these SOT-MRAM cells reduced the write power (0.35 ns field-free writing) by 35% compared to current SOT device technologies, while still maintaining stability (thermal stability factor (E/kBT) of 70 and a high TMR ratio of 170%).