Researchers from the Johannes Gutenberg University Mainz (JGU) in Germany, in collaboration with Antaios, have developed a new SOT-MRAM based platform that enables highly efficient and powerful data processing and storage.
By exploiting previously neglected orbital currents, the researchers have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a fundamental building block of SOT MRAM—to significantly enhance performance.
Their innovation includes:
- an over 50% reduction in overall energy consumption compared to existing memory technologies on an industrial scale;
- a 30% boost in efficiency, enabling faster and more reliable data storage;
- a 20% reduction in the input current required for magnetic switching to store the data;
- the achievement of a thermal stability factor that ensures data storage longevity of more than 10 years.
The secret behind efficient memory
The researchers explain that this breakthrough leverages a phenomenon known as the Orbital Hall Effect (OHE), enabling greater energy efficiency without relying on rare or expensive materials. Traditionally, SOT-MRAM relied on the spin property of electrons, where charge current is converted into spin current via the Spin Hall Effect. This process requires elements with high spin-orbit coupling, typically rare and expensive, often environmentally unfriendly, high atomic number materials such as platinum and tungsten. "In contrast, our approach harnesses a novel fundamental phenomenon by utilizing orbital currents derived from charge currents through the Orbital Hall Effect, eliminating the dependency on costly and rare materials," explained Dr. Rahul Gupta.
Comments
Antaios MRAM bankrupt?
Thank you K2, that's true,…