Researchers demonstrate an ultra-fast and efficient laser-induced opto-MRAM device

Researchers from Eindhoven University of Technology (TU/e) and the Fert Beijing Institute of Beihang University have experimentally demonstrated a fully-functional picosecond opto-MRAM building block device, by integrating ultrafast photonics with spintronics.

The researchers used a femtosecond (fs) laser, which is the fastest stimuli commercially that enabled the device to be extremely fast - and also a thousand times more energy efficient compared to standard MRAM devices. The device is based on the femtosecond laser-induced all-optical switching (AOS) scheme in synthetic ferrimagnetic multilayers that was discovered by TU/e in 2017, integrating it with MRAM bit

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Posted: Apr 30,2022 by Ron Mertens