Researchers from the National University of Singapore developed a new MRAM device structure technology that may prove to be easier to implement and have high reliability compared to current MRAM structures.
The researchers explain that current MRAM uses horizontal (in-plane) current-induced magnetization. This requires ultra-thin ferromagnetic structures which are challenging to implement and also suffer from low reliability. The new design uses magnetic multilayer structures as thick as 20 nanometer, providing an alternative film structure for transmission of electronic data and storage.
The researcher now plan to apply this structure in real STT-MRAM memory cells, and are looking for industry partners. They filed a US provisional patent for this technology.