Optically-assisted MRAM could outperform current MRAM devices by a factor of 1000

Researchers from the Moscow Institute of Physics and Technology developed a new MRAM architecture that is based on THz pulses which are used to change the spin state. This so-called optically-assisted MRAM is extremely efficient (the power required to switch a "bit" will be a thousand times smaller compared to current MRAM devices) and fast.

The researchers use picosecond-long pulses (3 picoseconds = one light oscillation cycle) on a specially developed structure comprised from micrometer-sized gold antennas deposited on a thulium orthoferrite sample. The researcher admit that the material is excellent for fundamental research, but it may be too early to tell whether it could be used in the future for commercial applications. The researchers tell us that they re trying to raise funds now to start fundamental studies of this new optically-assisted MRAM.