NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The grant is in addition to patent number 6,963,098 titled "Thermally Operated Switch Control Memory Cell," which was granted in November 2005, as well as other NVE patents relating to MRAM and magnetothermal MRAM.
Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current, to reduce the energy required to write data and allow reduction of the memory cell size while maintaining thermal stability. Thus magnetothermal MRAM has the potential to enable low power, dense MRAM.
"Magnetothermal MRAM could be the MRAM of the future because it promises to reduce both cell size and write current," said NVE President and CEO Daniel A. Baker, Ph.D. "This patent grant strengthens our magnetothermal MRAM intellectual property portfolio."