NVE Corporation announced today that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The patent is number 7,177,178 and is the grant of a patent under the application published by the USPTO as number 2006-0083056. The grant is in addition to patent number 7,023,723, which is similarly titled and was granted in April 2006. The invention of the new patent relates to dual-film MRAM cells.
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