Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: MRAM? phase-change memory and resistive random access memory.

The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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Manufacturer: CRC Press
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