Researchers from Northwestern University, in collaboration with researchers from China, Italy and France, developed a new SOT-MRAM device structure that enables deterministic switching without any need for bias magnetic fields.

The new approach, unlike most earlier methods, can be scaled to large wafers with good uniformity, since it doesn't rely on having a structural asymmetry in the device. SOT-MRAM devices based on this structure could be faster and more energy-efficient than current designs.

Orthogonal Spin Transfer MRAM (OST-MRAM) technology developer Spin Memory is shutting down. The company's main investor and founding company, Allied Minds, said in a statement that the main reasons challenges in securing new customers and COVID-19 which "significantly delayed the required testing of its development chip with ARM".

This is a sad ending to Spin Memory, which began its way as Spin Transfer Technologies - a spin-off from NYU that was established together with Allied Minds.

Researchers from Northwestern University developed a new method of building artificial neural networks using MRAM-based stochastic computing units. The researchers say that this design could enable AI devices that are highly energy efficient.

Embedded MRAM technologies are being adopted at major foundries, which enable the use of these technologies for unconventional computing architectures that use the stochasticity of MRAM cells (rather than their nonvolatility), to perform energy-efficient computing operations. MRAM cells exhibit stochastic switching characteristics, which is a challenge for reliable memory devices. But for neural networks, this can be taken advantage of if the MTJs are appropriately designed.

Researchers from Northwestern University and the University of Messina in Italy developed a new MRAM memory device composed of antiferromagnetic materials, which could be beneficial for use in AI systems and cryptocurrency mining.

Antiferromagnetic materials (AFM), offer inherently faster dynamics than ferromagnetic materials (FM), have no macroscopic magnetic poles and can be scaled much better. AFM-based memory cannot be erased with external magnetic fields which could prove to be a major security advantage.

pMTJ STT-MRAM developer Avalanche Technology announced that NexAIoT has adopted the company's 8Mbit MRAM (P-SRAM) products in its new fanless NISE & NIFE series industrial computers.

NexAIoT says that Avalanche's P-SRAM non-volatile memory provides the performance and reliability needed for its computers. The P-SRAM helps prevent data loss during power failures.

Everspin Technologies announced that Lucid Motors has designed-in the company's 256 Kb MRAM into its master powertrain system for its Lucid Air all-electric luxury sedan.

Everspin's The MR25H256AMDF MRAM device is designed for automotive applications and is qualified to the AEC-Q100 Grade 1 standard for use in demanding memory applications that require extreme reliability in critical data capturing systems.

pMTJ STT-MRAM developer Avalanche Technology announced its third-generation 1Gb space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices. The company says that these new devices enable customers to design unified memory architecture systems for high reliability aerospace applications, in extremely small form factors.

Avalanche's 2nd-Gen P-SRAM evaluation kit

The new Parallel x32 Space Grade series is offered in 512Mb, 1Gb, 2Gb and 4Gb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. Data is always non-volatile with >10^14 write cycles endurance and 10-year retention at 125°C. All four density options are available in a small footprint 142-Ball FBGA (17mm x 11mm) package.

Everspin Technologies announced its financial results for Q1 2021. Revenues in the quarter increased 1.7% from last year to $10.3 million. The net loss in the quarter was $0.5 million, and the company reported a positive cash flow (of $1.6 million) for the third consecutive quarter.

Everspin estimates that its Q2 2021 revenues will be in the range of $11 million to $12 million.

During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap:

As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory (this is interesting as before it was revealed that the company is developing 16nm MRAM). Finally eMRAM is touted as a possible replacement for configuration memory (eFUSE / OTP / Flash).

pMTJ STT-MRAM developer Avalanche Technology announced that it is now shipping new space-grade parallel asynchronous x16-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM technology.

Avalanche says that its STT-MRAM devices are smaller and more efficienct compared to Toggle MRAM based products, currently adopted in aerospace applications. The Parallel x16 Space Grade series is offered in 16Mb, 32Mb and 64Mb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. All three density options currently in production and available within industry standard lead times.