Coughlin: MRAM and STT-MRAM revenues will reach $3.3 billion by 2028

Tom Coughlin posted an interesting overview of the 2018 MRAM Developer day, which is well worth a read. Besides the conference report, Coughlin also updates on its market estimates - the market for MRAM and STT-MRAM memory solutions will experience fast growth - growing from $36 million in 2017 to about $3.3 billion in 2028. This growth will be at the expense of SRAM, NOR flash and some DRAM.

Memory revenue projection (2016-2028, Coughlin)

The demand for MRAM memory will result in an increased demand for MRAM production equipment, of course. MRAM equipment revenues will reach $792 million by 2028, according to Coughlin Associates.

Researchers develop a sub 10-nm STT MTJ

Researchers from UC Berkeley and the Huazhong University of Science and Technology developed sub 10-nm STT MTJs that shows a thermal stability factor of more than 80.

The reserachers say that the highly efficient and dense MTJ could lead to higher efficiency and density STT-MRAM devices and spin-based computers.

Everspin reports its financial results for Q2 2018

Everspin announced its financial results for Q2 2018 - with revenues of $10.8 million (up from $8.9 million in Q2 2017) and a net loss of $6.6 million (up from $5.2 million in Q2 2017).

Everspin STT-MRAM banner image

At the end of the quarter Everspin had $32.7 million in cash and equivalents. Everspin expects revenues in the next quarter to be between $10.6 million and $11 million.

IBM introduces its latest 19.2TB enterprise SSD drivers with Everspin's STT-MRAM

A couple of days ago, Everdisplay disclosed its first major design win with a "top enterprise storage vendor" for its 40nm 256Mb STT-MRAM chips. We now know that this vendor is IBM - as it introduced its latest-generation enterprise SSD FlashSystem, which indeed includes Everspin's STT-MRAM.

IBM 2018 FlashSystem spec slide

Using MRAM instead of DRAM memory enabled IBM to remove the relatively large supercapacitors (used to make the DRAM non-volatile) and so the company was able to reduced the size of its drives and switch to a standard 2.5-inch U.2 drive form factor. The new FlashSystem SSDs support up to 19.2TB of 64L 3D TLC NAND. IBM's system uses a 20-channel NAND interface and a four-lane PCIe 4.0 host interface that can operate in dual-port 2+2 mode.

Everspin announces its first major design win with a top enterprise storage vendor for its 256Mb STT-MRAM chips

Everspin announced that it will demonstrate its latest MRAM technologies at the Flash Memory Summit 2018 which starts today.

In its PR, Everdisplay discloses its first major design win with a "top enterprise storage vendor" for its 40nm 256Mb STT-MRAM chips. Everspin says that MRAM enabled the vendor to achieves new levels of performance, storage capacity and reliability.

Avalanche sign an agreement with UMC for 28nm embedded STT-MRAM technology

pMTJ STT-MRAM developer Avalanche Technology announced that it has entered into a joint development and production agreement with Taiwan's United Microelectronics Corporation (UMC), a global semiconductor foundry.

UMC will provide embedded non-volatile STT-MRAM blocks based on UMC's 28nm CMOS manufacturing process, which will enable customers to integrate low latency, very high performance and low power embedded MRAM memory blocks into MCUs and SoCs, targeting the Internet of Things, wearable, consumer, industrial and automotive electronics markets.

New material could finally enable fast, efficient and dense SOT-MRAM devices

SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed.

Now researchers at the Tokyo Institute of Technology have developed a new thin film material made from bismuth-antimony (BiSb) that is a topological insulator that simultaneously achieves a colossal spin Hall effect and high electrical conductivity - which means it could be used to create SOT-devices.

Multi-layered Co/Ni films are highly desirable materials for effective spin transfer torque

Researchers from the University of Lorraine in France have discovered that multilayers films made of cobalt (Co) and nickel (Ni) hold great promise for STT-MRAM applications.

Multi layered cobalt and nickel films for spintronics

It was already shown before that Co/Ni multilayers have very good properties for spintronics applications, but up until now it wasn't clear if the films have a sufficiently large intrinsic spin polarization, which is necessary to create and maintain spin-polarized currents in spintronic devices. It was now shown that the films have a spin polarization of about 90% - which is similar to the best spintronic materials.

ARM will launch an eMRAM compiler for Samsung's 28nm FDSOI process by the end of 2018

ARM announced that it is developing a compiler for embedded MRAM (eMRAM) for use with Samsung Foundry's 28nm fully-depleted silicon-on-insulator (FDSOI) integrated circuit manufacturing process. ARM completed its first eMARM IP test chip tape out, and the compiler will be available for use by lead partners in 4Q18.

ARM says that the eMRAM compiler can generate instances to replace Flash, EEPROM and slow SRAM/data buffer memories with a single non-volatile fast memory – particularly suited for cost- and power-sensitive IoT applications. The eMRAM can be integrated with as few as three additional masks, while embedded flash requires greater than 12 additional masks at 40nm and below.