Everspin starts to produce commercial 40nm 256Mb STT-MRAM chips

Everspin announced that the company recorded revenue for its first 40nm 256Mb STT-MRAM (pMTJ) products in Q4 2017, and is now ramping up volume production. The 256Mb STT-MRAM employs an innovative ST-DDR3 interface, unlocking performance previously unattainable in legacy MRAM components.

These new 40nm 256Mb chips are produced by Global Foundries, Everspin's production partner, which says it is on track to its risk production release of 22FDX eMRAM in 2018.

Crocus Nano Electronics successfully tests its 90 nm pMTJ STT-MRAM tech

Crocus Nano Electronics (CNE) announced successful test results for its 90 nm pMTJ STT-MRAM technology. The company says it has developed unique materials that are able to deliver high data retention, tolerance to external magnetic fields and low switching currents. The company expects to produce its first engineering samples in later in 2018.

Crocus Nano Electronics clean room photo

CNE also reports that it complete the design of its STT-MRAM test chip for further technology improvement in cooperation with eVaderis. Together with eVaderis, CNE created a "universal memory chip" able to serve as a platform for technology development through a wide range of MTJ sizes, currents and voltages ranges.

eVaderis demonstrates an innovative MRAM-based, memory-centric MCU

eVaderis logoeVaderis announced that it has successfully demonstrated a fully functioning design platform through an ultra-low-power microcontroller (MCU) in Beyond Semiconductor’s BA2X product line. eVaderis says that this new MCU is ideally suited for battery-powered applications in IoT and wearable electronics.

The new design uses imec's perpendicular, STT-MRAM technology that enables the new MCU to achieve non-volatile operation with high-speed read/write and low voltage. The MCU includes 3 Mb of on-chip STT-MRAM memory.

The best of 2017 - top MRAM stories

2017 is soon over - and this was a very exciting year for the MRAM industry. MRAM adoption continues, embedded MRAM is approaching and companies continue to announce advances and new products. Interest in MRAM technology and other next-generation memory technologies is clearly on the rise.

Here are the top 10 stories posted on MRAM-Info in 2017, ranked by popularity (i.e. how many people read the story):

  1. TSMC to start eMRAM production in 2018 (Jun 8)
  2. Spin Transfer Technologies starts sampling 80nm OST-MRAM chips (Jan 26)
  3. Samsung reaffirms 2018 target for STT-MRAM mass production (May 26)
  4. Everspin announces new MRAM customers and products (Mar 10)
  5. TDK presents the basic principles and challenges of embedded STT-MRAM (May 23)
  6. GlobalFoundries and Everspin say that the pMTJ STT-eMRAM features high reliability at high temperatures (Jun 30)
  7. Samsung to soon start mass producing 28nm embedded MRAM (Sep 28)
  8. Spin Transfer Technologies and Tokyo Electron to co-develop next-gen STT-MRAM devices (Oct 16)
  9. Everspin reports its financial results for Q3 2017, focuses on 256Mb STT-MRAM (Nov 14)
  10. Everspin reports its financial results for Q4 2016 (Mar 10)

Everspin shows how its new nvNITRO accelerators provide superior latency determinism

In March 2017 Everspin announced its nvNITRO line of storage accelerators, with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips. Everspin is accepting orders for these accelerators which should start shipping by the end of the year.

In the video above you can see a recent demonstration by Everspin of how these nvNITRO accelerators provide superior latency determinism enabling a Low Latency Write Buffer for applications such as Apache Log4J.

Everspin reports its financial results for Q3 2017, focuses on 256Mb STT-MRAM

Everspin reports its financial results for Q3 2017. Revenues reached a record $9 million (up from $7.2 million in Q3 2016 and up only slightly from last quarter), while the net loss grew to $5.4 million (up from $1.4 million in Q3 2016).

Everspin  Q3 2017 earnings slide

At the end of the quarter, Everspin had $17.8 million in cash and equivalents (down from $21.2 million at the end of Q2 2017). Everspin expects revenue in Q4 2017 to be in the range of $9.9 million to $10.3 million.

Keysight Technology announces a new MRAM test platform designed in collaboration with Tohoku University

Tohoku University's Center for Innovative Integrated Electronic System (CIES) announced that its collaboration with Keysight Technology has led to the release of a new MRAM test platform product, the NX5730A.

Kesight NX5730A Memory Test system photo

Keysight's NX5730A is a high-throughput 1 ns Pulsed IV memory test solution. Keysight says that this solution is a unique dedicated system for characterizing emerging devices such as magnetic tunnel junction (MTJ) on silicon wafers, accelerating the efficiency of device characterization and memory production testing.

A new method to control magnetism could lead to ultra-fast and more efficient MRAM chips

Researchers from UC Berkeley and UC Riverside developed a new ultra-fast method for electrically controlling magnetism in certain metals. The researchers say that this could be applied to future MRAM chips, to provide much faster write speeds and more efficient operation.

Ultrafast electrical magnetic switching (UCB + UCR)

The researchers built special circuits to study how magnetic metals respond to electrical pulses as short as a few picoseconds. The researchers found that in a magnetic alloy made up of gadolinium and iron, these fast electrical pulses can switch the direction of the magnetism in less than 10 picoseconds, orders of magnitude faster than any other MRAM technology.

Veeco: high volume manufacturing using our Ion Beam Etch systems to begin in 2018

Veeco developed an Ion Beam Etch system for MRAM production, and during the company's Q3 2017 conference call it updated on the new system.

Veeco MRAM IBE slide, Q3-2017

Veeco says that its Ion Beam technology is well suited for etching the multilayer magnetic stack used in MRAM chips. Veeco already placed systems at multiple customers and expect high volume manufacturing to start next year for embedded memory applications.