GlobalFoundries: 22nm eMRAM technology is now available, prototyping to start in Q1 2018

Sep 22, 2017

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

Metalgrass launches a new knowledge hub to focus on Micro-LED displays

Aug 16, 2017

We are happy to announce a new Metalgrass knowledge hub, MicroLED-Info.com. This new site will focus on Micro-LED display technology and its future market. MicroLED is quickly becoming a promising future display technology.

Many expect the first Micro-LED devices to hit the market in the very near future, with first applications in the wearable market - and also in HUDs and HMDs. MicroLED promise great performance, very high efficiency and brightness - but of course there are still many technical challenges ahead.

Seagate demonstrate an MRAM-powered high performance SSD boot drive

Aug 15, 2017

Seagate demonstrate several new prototypes and technologies at Flash Memory Summit last week, and one of these is the new Nytron 5000B SSD drive that is a high-performance boot drive. The new device has 256GB of 3D MLC NAND and makes use of 1258MB of Everspin's STT-MRAM in addition to a "normal" DRAM cache.

Seagate SSD with MRAM cache prototype (August-2017)

Seagate says that the MRAM can be used as either a write cache for user data or it can be exposed directly as a separate storage namespace for explicit tiered storage. Seagate said that this is currently just a test-platform prototype - and not a preview of an upcoming product.

Everspin announces its financial results for Q2 2017

Aug 11, 2017

Everspin announced its financial results for Q2 2017. Revenues for the quarter reached $8.9 million (up from $6.7 million in Q2 2016) and the net loss reached $5.2 million (down slightly from $5.4 million in Q2 2016).

This was a record quarter for Everspin in terms of revenues, which shows the continued growth of its first-gen toggle MRAM. Everspin is now focused on bringing its STT-MRAM to market, and the company announced that its 256Mb STT-MRAM chips entered production to be used in SMART Modular's NVM Express PCIe Card.

Everspin launches its nvNITRO line of storage accelerators, to start shipments in Q4 2017

Aug 10, 2017

Everspin announced its nvNITRO line of storage accelerators back in March 2017, and the company now announces that it has officially launched the new accelerators with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips.

Everspin nvNITRO NVMe PCIe STT-MRAM card photo

Everspin is accepting orders for the new products, which will ship in Q4 2017. The nvNITRO accelerators operate up to 1.5 million IOPS with 6μs end-to-end latency. Everspin is delivering a half-height, halflength (HHHL) PCIe card as well as U.2 form factors; both support NVMe and memory mapped IO (MMIO) access modes.

Everspin starts to sample 1Gb pMTJ STT-MRAM chips

Aug 10, 2017

Everspin announced that it started sampling 1Gb STT-MRAM chips. Everspin's new chips provide a high-endurance, persistant memory with a DDR4-compatible interface. Everspin sees these chips being used in storage devices to provide protection against power loss without the use of supercapacitors or batteries.

Everspin 128Kb automotive MRAM photo

Everspin's new pMTJ 1Gb chips provide 4 times the capacity of the company's current 256Mb DDR3 chips. The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers in partnership with GlobalFoundries.

GlobalFoundries and Everspin say that the pMTJ STT-eMRAM features high reliability at high temperatures

Jun 30, 2017

GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures.

Global Foundries 22nm eMRAM slide

The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with outstanding endurance at 125 degrees Celsius. GlobalFoundries says that this will enable eMRAM to be used for general purpose MCUs and automotive SOCs.

TSMC to start eMRAM production in 2018

Jun 08, 2017

According to reports, Taiwan Semiconductor Manufacturing Company (TSMC) is aiming to start producing embedded MRAM chips in 2018 using a 22 nm process. This will be initial "risk production" to gauge market reception.

TSMC production facility photo

TSMC also aims to start embedded RRAM chip production in 2019.

Samsung reaffirms 2018 target for STT-MRAM mass production

May 26, 2017

During Samsung Electronic's Foundry Forum, the Korean chip maker reaffirmed its goal to start producing STT-MRAM chips in 2018. In fact Samsung now says that it will mass produce these chips next year, while last year it said that 2018 will only see limited production while real mass production will only begin in 2019.

Samsung announced it will produce the 2018 MRAM chips will be produced using 8-nano low power plus (8LMPP) semiconductor foundry process. Samsung sees MRAM produced by 4LPP by 2020.