New magnetic switching technology will enable terahertz MRAM devices

Researchers from the US Ames Laboratory in collaboration with Iowa State University and Greece's University of Crete developed a new way to switch magnetism that is at least 1000 times faster than current technologies. This all-optical quantum method may lead towards terahertz (or even faster) MRAM devices and faster hard drives.

Fast optical switching in a colossal magneto-resistive manganite photo

The new technology uses short laser pulses to change the magnetic structure (from anti-ferromagnetic to ferromagnetic ordering) in colossal magnetoresistive materials (CMRs).

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Posted: Apr 10,2013 by Ron Mertens