Samsung logoSamsung is a large Korean conglomerate focusing on electronics, displays (both LCDs and OLEDs) and semiconductors. Samsung is a leading memory producer and is researching several next-generation memory technologies, including RRAM and MRAM.

Samsung collaborates with several companies on STT-MRAM technologies, including Hynix and IBM.In April 2016 Samsung's semiconductor unit manager said that Samsung will be ready with MRAM chips soon.

In 2011 Samsung acquired Grandis, an STT-MRAM technology developer. In September 2017 it was reported that Samsung is set to start mass producing 28nm embedded MRAM.

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The latest Samsung MRAM news:

Samsung to looking for global STT-MRAM research partners, offers funding and collaboration

Samsung logoSamsung Electronics launched a new global research outreach program aimed towards STT-MRAM innovation. The Samsung Global MRAM Innovation (SGMI) is looking for colleges, universities and research labs from all over the world to explore breakthrough and innovative STT-MRAM research.



Samsung invites submissions for novel ideas on STT-MRAM research - and the selected proposals will receive financial support from Samsung. Samsung will give around $70,000 to $150,000 for one year research (which may be extended for up to three years). They may also offer larger funds for exceptional proposals. The deadline for submission is September 28, 2013.

Samsung developed a perpendicular MTJ at 17nm

Samsung developed a perpendicular MTJ element using 17nm technology - the world's smallest. This paves the way towards sub-20nm STT-MRAM. Up until now it was believed that to create such a small P-MTJ you will have to use a multi-layer structure and a rare-earth material for the ferromagnetic electrode. Samsung however used regular materials and structure (Ta/CoFeB/MgO/Ta) and optimized the oxidation process for the tunnel insulator (MgO).

By increasing the anisotropic energy on the joint interface the perpendicular magnetization of the ferromagnetic electrode was stabilized. Samsung reports a thermal stability factor of 34, a TMR ratio of 70% and a writing current of 44microampere with a perpendicular magnetization MTJ element whose cross-section area is 17 x 40nm. There is still room for improvement in the thermal stability factor in order to achieve over 1Gbit capacity at 20nm. This can be realized by making more improvements to the newly developed oxidation process for the tunnel insulator

Samsung acquires Grandis

Samsung logoSamsung announced that it has acquired Grandis, developer of STT-MRAM technology. We do not have any financial details yet, but Grandis' CEO Frahad Tabrizi said that this deal serves as a& "very successful exit" for Grandis's investors. Grandis raised $15 million since it was founded in 2002 (and also raised about the same from DARPA grants including a $8.6 million second-phase project granted in June 2010).

Grandis licensed their technology to several companies. We know that Hynix licensed it in 2008. The company was also collaborating with Renesas technologiesHynix and Grandis were developing a compact in-plane MTJ based STT-RAM device that uses modified DRAM processes at 54nm.

IBM, Samsung and Hynix-Grandis report STT-MRAM research progress

During the International Electron Device Meeting (IEDM) exhibition we got some updates about STT-MRAM research done at IBM, Samsung and Hynix-Grandis (who are researching STT-MRAM together).

IBM is working together with TDK and has presented a new 4-kbit perpendicular STT-MRAM array using tunnel junctions. Samsung has presented an on-axis MRAM with a novel MTJ, which they say open he way towards sub-30nm scaling. Using ferromagnetic electrode and a different MTJ structure design, Samsung think that they can scale this to a sub-20nm level.

Hynix and Samsung to co-develop STT-RAM in a $40 million project

The Korean Government has decided to fund STT-RAM research for Hynix and Samsung in a $40 million project. The government will pay around half of the sum for the project, which is intended to run till 2014. The project calls for the government to work with Samsung and Hynix together for research and development on STT-MRAM chips. Korea aims to control around 45% of the 30-nano type memory chip market by 2015.

The companies have already opened a new laboratory at Hangyang University's fusion technology center. It is already equipped with a fully operational 300mm magnetic thin film deposition system and other chip-making facilities.

Samsung has started to produce 512Mb Phase-Change memory

Samsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%.

The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.

Samsung and Hynix to launch STT-MRAM JV in September, expect the chip to mature around 2012

Samsung logoSamsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).

The companies said they will engage in joint research and development (R&D) of spin-torque-transfer magnetic-random-access-memory (STT-MRAM) chips, and become the industry standard-setters for the next generation 450mm wafer fab market.

They added that if the joint R&D venture on STT-MRAM is successful, the companies will be able to fend off Japanese competitors trying to regain dominance in the semiconductor sector and generate an estimated $500 million worth of royalty earnings.

The global market for the new chip is expected to mature around 2012.

Samsung and Hynix to jointly develop STT-MRAM

Samsung logoSamsung Electronics and Hynix Semiconductor, the world's two largest memory chip manufacturers, have agreed to join hands to develop the next generation of semiconductors so that South Korea can stay competitive with its foreign rivals.

Under the three-stage plan A total of about 50M$ will be spent to design and build futuristic chips such as the spin-torque-transfer magnetic-random-access-memory (STT-MRAM) and various non-volatile memory devices.

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