NVE Corporation announced today that it has been awarded a contract for approximately $520,000 by the Defense Advanced Research Projects Agency (DARPA) to develop next-generation spin-dependent tunneling (SDT) junctions.

NVE will optimize and demonstrate high-sensitivity SDT junction designs using computerized nanostructure characterizations and atomic simulations to be developed by the University of Virginia and Oxford University (England).

SDT junctions are key spintronics building blocks used in magnetoresistive random access memory (MRAM), ultra-sensitive sensors, and biomagnetic sensors.