Intel Corp. has revealed a prototype PRAM (phase change RAM) wafer, long under development, at IDF Spring 2007 in Beijing, China, which began on April 16, 2007. At the keynote speech, Intel's CTO Justin Rattner announced, "the company will start mass-production of PRAM as early as the second half of 2007." He also said, "We consider replacing NOR flash memory with PRAM first, but that's not our goal. PRAM may possibly replace DRAM in the near future. We are paying a lot of attention to the technology."

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