Researchers from the A*STAR institute in Singapore suggest a new design that could make STT-MRAM devices faster. Using a computational model, the researchers tried different designs for the relative orientation of the magnetic fields in both MRAM layers (the 'field-like' term).

The strength of the 'field-like' term depends on the device geometry and the materials used. Devices with a strong field-like term has a greater potential to reduce switching times than for devices in which the field-like term is negligible.

A better understanding of the field-like term is still needed, but this work may lead to faster STT-MRAM devices.

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