In 2015, the EU launched the GREAT project, with an aim to co-integrate multiple functions like sensors, RF receivers and logic/memory together within CMOS by adapting STT-MTJs to a single baseline technology in the same system on chip. GREAT stands for heteroGeneous integRated magnetic tEchnology using multifonctionnal stAndardized sTack.
The project partners now announced the first hybrid CMOS/MSS-MRAM Tape Out with Israel-based Tower Jazz. This hybrid integrated circuit uses the 180nm CMOS process from Tower and an academic MRAM post-process that will be done by CEA Spintec within their facilities.
This demonstrator embeds several different functional blocks, all based on Multifunctional Standardized Stack Magnetic Tunnel Junctions: some are dedicated to RF applications, some use specific non-volatile digital cells and others are more dedicated to magnetic sensors. The next phase is to test and the blocks and characterize the hybrid CMOS/MRAM process. Results are expected by the second quarter of 2017.
The GREAT project partners inclues CEA Spintec, Karlsruhe Institute of Technology (KIT), Laboratoire d'Informatique, de Robotique et de MicroÃ©lectronique de Montpellier (LIRMM), Universitatea Transilvania din Brasov (UTBV), Technische UniversitÃ¤t Dresde (TUD), Singulus Technologies AG, Tower Jazz, eVaderis and Toplink Innovation.