Domain wall displacement switching may lead to efficient spintronics memory devices

Researchers from Helmholtz-Zentrum Berlin developed a robust and reliable magnetization switching process - that could one day lead to highly efficient spintronics memory devices.

Magnetic switching by domain wall displacement (HZB photo)

The researchers used domain wall displacement to switch between two possible vortex states - without any applied field. The basic idea is to use tiny tings which have slightly displaced holes.

Posted: Apr 17,2017 by Ron Mertens