Dilute ferromagnetic oxide materials can be used in MRAM devices

Researchers from Japan discovered that dilute ferromagnetic oxide materials remain in a ferromagnetic state at room temperature. The team used cobalt-doped titanium dioxide (Co:TiO2) as their study material. This means hat magnetism and conductivity are correlated in thin films of Co:TiO2. Such materials may plan an important role in spintronic devices, including MRAM chips.

Thin film Co:TiO2 photo

Posted: Apr 24,2011 by Ron Mertens