Seiko Epson Corp and Fujitsu have announced the results of their joint project to develop next-generation ferrorelectric random access memory (FRAM) technology. The joint development project was successfully completed recently and produced the anticipated results.
Through the project, the two companies developed technology for forming, processing and evaluating a new ferroelectric (PZT) film and created FRAM memory core process technology that is highly integrated (four times the level of conventional FRAM), features high performance (read/write speeds over three times faster than conventional FRAM) and offers a high degree of reliability (capable of more than 100 trillion read/write cycles). FRAM is currently attracting attention as a technology for secure memory, and this level of performance is claimed to be a world first. Since the ferroelectric process can be added to existing CMOS logic processes, it will be suitable for the development of mass production technologies.