Intel Corp. sees current flash memory technology sustaining until the end of the decade, pushing out the need for "universal memory" until 2010, according to Greg Komoto, manager of strategic planning for Intel's flash memory group.
Speaking at a session at the Intel Developer Forum (March 8), Komoto said Intel continues to believe that ovonic unified memory (OUM), also known as phase-change memory, is the most promising nonvolatile memory alternative, more so than magnetic RAM (MRAM) or ferro-electric RAM (FeRAM), which are also being studied as potential replacements.
Komoto said OUM shows the most promise based on its scaling path, declining cost basis and the fact that it is bit-alterable.

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