California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.

Avalanche Technology currently offers STT-MRAM chips up to 64Mb in size, in both discrete and embedded form.

Avalanche started to sample 32Mb and 64Mb STT-MRAM chips in 2015. In February 2016 the company raised $23 million, adding to the $30 million raised in 2012. In October 2016 Avalanche announced a collaboration with Sony Sony Semiconductor Manufacturing Corporation to start volume pMTJ STT-MRAM production on 300mm wafers by early 2017.

Company Address: 
46600 Landing Parkway,
Fremont, CA 94538
United States
Company Geofield: 

The latest Avalanche news:

Avalanche raises $30 million to bring their STT-MRAM products to market

Avalanche Technology announced that it has raised $30 million from existing investors (Vulcan Capital, Sequoia Capital, Bessemer Venture Partners, Thomvest Ventures and Qualcomm Ventures) and also from a new investor, VTB capital. Avalanche hopes that this investment will enable them to bring the first products into the market.



Avalanche will produce STT-MRAM chips based on their proprietary SPMEM (Spin Programmable Memory) technology. SPMEM uses a revolutionary spin current and voltage switching technology that enables "lower write current, smaller cell size and excellent scalability". The first products will use a 65 nm process, but the company says that their technology is scalable to 10 nm or even less.

Avalanche and ISI developed a new wafer level analyzer for STT-MRAM

Avalanche Technology and Integral Solutions International (ISI) have designed a Wafer Level Analyzer, the WLA-3000, to be used in STT-MRAM development. 

The WLA-3000 includes specific hardware test modules including nS-range Pulse Generator that quickly measures switching currentse of MTJ devices in STT-MRAM as a function of Pulse Width. Using this Pulse Generator module, customers will be able to perform Error Rate, Switching Probability, Endurance Testing, and Read/Write Disturb analysis in a fraction of time as compared to other slower pulsers.

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