Avalanche Technology announce four additional key MRAM and STT-MRAM patents

Avalanche Technology has been awarded new key patents in the areas of STT-MRAM technology, MRAM integration and manufacturing and perpendicular Magnetic Tunnel Junction (pMTJ) STT-MRAM. This follows eight new key patents awarded to Avalanche since the beginning of 2014.

Avalanche (founded in 2006 and based in California, US) developed patented Spin Programmable STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology. The company wants to license their technology for embedded applications and also build discrete standalone memory devices. In July 2012 the company raised $30 million.

The four new patents are “STT-MRAM MTJ manufacturing method with in-situ annealing” (USPTO #8,758,850), “MRAM with sidewall protection and method of fabrication” (USPTO #8,709,956), “MTJ MRAM with stud patterning” (USPTO #8,772,888) and “Management of Memory Array With Magnetic Random Access Memory (MRAM)” (USPTO 8,724,392).

Posted: Aug 08,2014 by Ron Mertens