Avalanche Technology announced that has achieved the phase-one milestone of its magnetic cell scaling project, as it aims to be able to produce higher-density space-grade MRAM. This cell size reduction, in concert with additional planned geometry shrink, will enable the increase in memory density by 16X.
Avalanche has successfully established high density MTJ array manufacturing in a high volume production environment at 22 nm process node, achieving an MTJ critical dimension (CD) of 40 nm with a pitch of 100nm and below. Avalanche says that through rigorous optimization of MTJ hard mask and etch processes, the dense array delivers low bit error rates, enabling a minimum cell size of 0.01 μm² and high yield, gigabit class monolithic chip production, with demonstrated scalability to 12 nm process nodes.
