February 2022

NTU and TSMC researchers develop a new SOT-MRAM structure with high spin-orbital Hall conductivity

Researchers from National Taiwan University in collaboration with TSMC developed a new SOT-MRAM device structure, that features sizable orbital currents. This research promises a pathway for enhancing SOT-MRAM performance by harnessing both the conventional spin currents and the emergent orbital currents.

NTU TSMC PtCr Alloys SOT-MRAMThe new device is based on 3d light transition metals (such as V and Cr) that are incorporated into the classical spin Hall metal Pt. The Pt-Cr alloy enhances the charge-to-spin conversion efficiency which can realize high spin-orbital Hall conductivity, beyond the conventional spin Hall limit.

Read the full story Posted: Feb 27,2022

Researchers developed an ultra low power BiSb-based SOT MRAM device

Researchers from the Tokyo Institute of Technology developed an ultrahigh-efficiency SOT magnetization switching in fully sputtered BiSb–(Co/Pt) multilayers with large perpendicular magnetic anisotropy (PMA).

Scheme of ultra low power BiSb SOT-MRAM device (Tokyo IT)

The new device offers a large spin Hall angle and high electrical conductivity, thus satisfying all the three requirements for SOT-MRAM implementation. The researchers managed to achieve robust SOT magnetization at a low current density despite the large PMA field.

Read the full story Posted: Feb 23,2022

Hprobe announces a large magnetic tester order from a Korean semiconductor maker

Hprobe, a developer of testing equipment for magnetic devices, announced a significant order from a tier-1 semiconductor manufacturer in Korea for a wafer-level magnetic tester.

Hprobe IBEX WAT H3DM Light photo

Hprobe's IBEX platform is compatible with 200mm and 300mm automated wafer probers, and is dedicated to testing MRAM magnetic tunnel junctions, bit cells based on STT-MRAM, SOT-MRAM, and Voltage Controlled (VC-MRAM) technologies.

Read the full story Posted: Feb 04,2022