Spin Transfer Technologies announces a breakthrough new STT-MRAM technology
Spin Transfer Technologies (STT) announced that its unique Precessional Spin Current (PSC) structure can increase the spin-torque efficiency of any MRAM device by 40-70 percent, which means dramatically higher data retention while consuming less power.
Following advanced testing, the company says that these higher spin-torque efficiencies translate to retention times lengthening by a factor of over 10,000 while reducing write current.
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Posted: Apr 30,2018